Alan K. Wadsworth, Marketing Integration Manager, Keysight Technologies
Alan Wadsworth is currently responsible for marketing Keysight’s semiconductor, oscilloscope, Pathwave software and power products. Alan has over 30 years of experience in the semiconductor industry in both design and test. He is also the author of Keysight’s Parametric Measurement Handbook, which contains over 200 pages of information on semiconductor parametric test and measurement techniques.
Alan joined Hewlett Packard in 1991 and worked for five years as the SRAM engineer in HP’s Memory Technology Center, which was part of Corporate Procurement. Prior to that Alan worked as an integrated circuit designer at Signetics/Philips for nine years where he designed circuits in both bipolar and BiCMOS technologies.
Alan holds bachelor’s and master’s degrees in electrical engineering from the Massachusetts Institute of Technology and an MBA from Santa Clara University.
Techniques for the Efficient Characterization of Wide Bandgap Power Devices
Wide band gap power devices offer significant benefits over power devices fabricated from silicon. The key advantages of wide bandgap power devices include: higher operating temperature, higher operating voltage, higher operating frequencies and lower power loss (lower on resistance). However, while wide bandgap devices offer many performance benefits they also present many characterization challenges including:
- Accurate sub-milliohm on resistance measurement at hundreds of amps of current
- Junction capacitance measurement at thousands of volts of DC bias
- Gate charge characterization at thousands of volts and hundreds of amps
- Effective characterization of gate/base resistance
This presentation will focus on the measurement theory necessary to characterize these parameters and also on how to use this information to calculate power loss. It will cover both the testing of packaged as well as on-wafer devices.