Shammi Verma, Scientist SD, Semi-Conductor Laboratory (SCL)
Shammi is currently working as a scientist in Reliability & Quality Assurance Division, Semi-Conductor Laboratory (SCL), in Chandigarh, India, since Mar, 2015. He received his Ph.D. in Physics from IUAC/JNU, New Delhi, in Jan, 2015. His research work involved radiation effects studies on semiconductor devices using swift heavy ions and gamma rays facilities at IUAC in Delhi. He has authored and co-authored several research articles published in many peer-reviewed journals such as IEEE and the work was presented in national and international conferences/workshops. He has the first-hand experience of semiconductor device fabrication in clean room foundry (fab), their characterization and reliability testing. Shammi is a life member of Semiconductor Society of India and Indian Physics Association and Indian Society of Systems for Science and Engineering (ISSE).
Accelerated Life Testing for Reliability Wearout Mechanisms in 180 nm CMOS Technology
The concept of accelerated testing to estimate the reliability lifetime for wearout mechanisms like Electromigration (EM), Hot Carrier Injection (HCI), Negative Bias Temperature Instability (NBTI) and Time Dependent Dielectric Breakdown (TDDB) in 180 nm CMOS technology will be presented in this paper. The details of test structures used and testing methodology (stress conditions etc.) will be discussed herein. Specially designed reliability test structures fabricated at Semi-Conductor Laboratory (SCL), Chandigarh using 180 nm standard CMOS process were tested on 1164 Reliability Test System for reliability lifetime estimation. For EM testing, test structures covering all metal and via levels were analyzed for both upward and downward current flow. HCI and NBTI testing was performed on different MOSFETs. The dielectric breakdown (TDDB) has been statistically analyzed on area, periphery and isolation MOS capacitors. The data analysis approach beginning from ranking the failure data, fitting the data, model parameter extraction, voltage and temperature acceleration factors, extrapolation at use conditions using statistical distributions such as Weibull and Lognormal will also be covered. A comprehensive summary of different reliability test results for all failure mechanisms will be presented in the end.